By altering fabrication techniques and doping concentrations, we were able to demonstrate a donor/acceptor based phototransistor with p-type characteristics with improved performance. According to literature, this 1:1 concentration leads to low overall device performance, lack of I-V curve saturation (kink effect), and bipolar behavior. Unlike in organic photovoltaics (OPV) where 1:1 proportion by mass of the donor:acceptor is utilized to make up the active layer, that ratio appears to be too high for phototransistor applications. In this study, a phototransistor based on a donor/acceptor (D/A) pair (photo-doping) was studied and demonstrated. A phototransistor incorporates the properties and functions of a transistor and photodetector.
Organic/Polymeric Semiconductor (OSC) based devices have been under extensive study for the past three decades due to their intrinsic potential advantages such as lightweight, mechanical flexibility, biocompatibility, low toxicity, abundant material availability, low cost of processing, etc.
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